data sheet 1 2001-01-01 description this two-stage gaas mmic high power amplifier is intended for use in radio link applications. it provides an output power of 27 dbm at 1 db gain compression. the device is fabricated with a 0.18 micron pseudomorphic ingaas/algaas/gaas high electron mobility transistor processing technology. 24 - 27 ghz gaas high power amplifier mmic 24 - 27 ghz hpa preliminary data sheet ? two-stage monolithic microwave integrated circuit (mmic) hemt amplifier input/output matched to 50 ? frequency range: 24 ghz to 27 ghz gain > 12 db p ? 1db > 27 dbm p sat > 29 dbm chip size: 2.71 mm 3.0 mm esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code package 24 - 27 ghz hpa ? on request chip electrical specifications v g = 0 v, v d = 5 v, i d = 930 ma parameter limit values unit test conditions min. typ. max. frequency range 24 ? 27 ghz ? p ? 1db @ 26 ghz ? 27 ? dbm ? p sat @ 26 ghz ? 29 ? dbm ? gain @ 26 ghz ? 12 ? db ? input return loss ? < ? 10 ? db ? output return loss ? < ? 10 ? db ?
gaas components 24 - 27 ghz hpa data sheet 2 2001-01-01 measured data (on chip measurements) on-wafer measurement: v gs = 0.1 v, v ds = 5 v, i ds1 = 290 ma, i ds2 = 640 ma maximum ratings parameter symbol value unit drain voltage v d 5v gate voltage v g ? 2 ? + 0.8 v technology data parameter value chip thickness 75 m chip size 2.71 mm 3.0 mm dc/rf bond pads 100 m 100 m/80 m 80 m bond pad material au (plated gold) chip passivation sin (silicon nitride) -10 0 eht09205 -15 -5 0 5 10 15 dbm 25 5 -10 10 -5 15 0 20 5 25 10 30 15 35 20 dbm db gain input power output power
gaas components 24 - 27 ghz hpa data sheet 3 2001-01-01 recommendation of bonding conditions figure 1 bond plan the gate and drain bias voltages can be applied from only one side of the chip, they are connected internally. capacitors to ground with approximately 100 pf should be used to block the v g and v d bias pads. parameter thermocompression nailhead, without ultrasonic wedge bonding bond pull test mil 883, > 2 g table temp. 250 c 250 c 1 : 2.5 g tool temp. 180 c 150 c 2 : 3.1 g scrub 100 hz ? 3 : 3.2 g bond force 50 g 25 g 4 : 3.0 g wire diameter 25 m17 m 5 : 2.8 g eht09206 rf in rf out g1 vv d1 v g2 v d2 v g1 v d1 g2 v d2 v
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